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| LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES * LOW NOISE FIGURE: 1.8 dB typical at 12 GHz * HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz * LG = 0.3 m, WG = 280 m * LOW COST PLASTIC PACKAGING * TAPE & REEL PACKAGING OPTION AVAILABLE Noise Figure, NF (dB) 4 3.5 Ga 3 2.5 2 1.5 1 NF 0.5 0 1 NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 24 21 18 15 12 9 6 3 0 10 20 DESCRIPTION NE76038 is a high performance gallium arsenide metal semiconductor field effect transistor housed in a plastic package. Its low noise figure makes this device appropriate for use in the second or third stages of low noise amplifiers operating in the 1 - 14 GHz frequency range. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. These devices feature a recessed 0.3 micron gate and triple epitaxial technology. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25C) PART NUMBER PACKAGE OUTLINE SYMBOLS NFOPT1 PARAMETERS AND CONDITIONS Optimum Noise Figure at VDS = 3 V, IDS = 10 mA f = 4 GHz f = 12 GHz Associated Gain at VDS = 3 V, IDS = 10 mA f = 4 GHz f = 12 GHz Saturated Drain Current at VDS = 3 V, VGS = 0 V Pinch-off Voltage at VDS = 3 V, IDS = 0.1 mA Transconductance at VDS = 3 V, IDS = 10 mA Gate to Source Leakage Current at VGS = -3 V UNITS MIN NE76038 38 TYP MAX dB dB dB dB mA V mS A 12.0 15 -3.0 30 0.8 1.8 13.0 7.5 30 -0.8 40 1.2 GA IDSS VP gm IGSO 50 -0.5 70 10 Note: 1. Typical values of noise figures are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen. California Eastern Laboratories Associated Gain, GA (dB) NE76038 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C) SYMBOLS VDS VGD VGS IDS PIN TCH TSTG PT RTH2, 3 PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current RF Input (CW) Channel Temperature Storage Temperature Total Power Dissipation Thermal Resistance UNITS V V V mA dBm C C mW C/W RATINGS 5 -5 -3 IDSS +15 150 -65 to +150 240 1250 TYPICAL NOISE PARAMETERS (TA = 25C) VDS = 3 V, IDS = 10 mA FREQ. (GHz) 0.5 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 NFOPT (dB) 0.40 0.45 0.60 0.80 1.10 1.35 1.60 1.80 2.10 2.30 2.55 GA (dB) 21.67 20.01 18.88 15.53 13.24 11.32 9.49 8.15 7.11 6.54 5.68 MAG 0.84 0.82 0.76 0.66 0.55 0.50 0.48 0.54 0.63 0.70 0.77 OPT ANG1 5 10 28 58 101 152 -166 -130 -105 -87 -75 Rn/50 0.79 0.75 0.70 0.61 0.50 0.40 0.31 0.25 0.20 0.15 0.12 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. RTH for plastic package mounted on glass epoxy substrate is 965C/W. 3. RTH for chip mounted on copper heat sink is 190C/W. Note: 1. OPT is referenced to the bend of the lead, as shown on back page. TYPICAL PERFORMANCE CURVES (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300 35 DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE VDS = 3 V Total Power Dissipation, PT (mW) 250 30 Drain Current, IDS (mA) 200 Infinite Heat Sink 25 20 150 Free Air 100 15 10 50 0 0 25 50 75 100 125 150 175 200 5 0 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5 Ambient Temperature, TA (C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 Gate to Source Voltage, VGS (V) Drain Current, IDS (mA) 40 VGS = 0 V 30 -0.2 V 20 10 -0.4 V -0.6 V 0 0 1 2 3 4 5 Drain to Source Voltage, VDS (V) NE76038 TYPICAL SCATTERING PARAMETERS1 (TA = 25C) VDS = 3 V, lDs = 10 mA FREQUENCY (GHz) 0.1 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 MAG 0.99 0.99 0.99 0.97 0.95 0.90 0.84 0.77 0.70 0.64 0.61 0.58 0.57 0.58 0.60 0.64 0.67 0.71 0.74 0.77 0.78 S11 ANG -2 -9 -17 -25 -34 -51 -68 -86 -106 -126 -145 -165 175 156 139 125 114 104 95 86 80 MAG 3.29 3.29 3.25 3.25 3.22 3.15 3.07 2.97 2.83 2.66 2.51 2.37 2.21 2.05 1.87 1.72 1.57 1.45 1.32 1.19 1.09 S21 ANG 178 171 163 155 147 131 115 99 84 69 55 42 27 15 2 -10 -20 -32 -41 -52 -61 MAG 0.006 0.013 0.02 0.03 0.04 0.06 0.08 0.09 0.10 0.11 0.11 0.11 0.11 0.12 0.12 0.12 0.12 0.13 0.13 0.13 0.14 S12 ANG 101 82 78 71 66 57 47 37 28 21 16 10 7 3 -0 -1 -2 -4 -8 -12 -17 MAG 0.63 0.63 0.62 0.61 0.60 0.58 0.54 0.50 0.45 0.41 0.37 0.33 0.30 0.27 0.27 0.27 0.30 0.34 0.39 0.44 0.46 S22 ANG -2 -6 -12 -18 -24 -35 -46 -58 -70 -81 -92 -104 -118 -136 -157 -178 164 150 135 122 111 0.174 0.183 0.127 0.249 0.297 0.392 0.500 0.638 0.763 0.866 0.981 1.116 1.228 1.217 1.282 1.301 1.325 1.175 1.158 1.127 1.094 K MAG2 (dB) 27.390 24.033 22.109 20.348 19.058 17.202 15.840 15.185 14.518 13.835 13.583 11.264 10.152 9.514 8.737 8.274 7.756 7.941 7.653 7.453 7.043 VDS = 3 V, IDS = 30 mA 0.1 0.5 1.0 1.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.99 0.99 0.98 0.96 0.93 0.86 0.79 0.71 0.64 0.58 0.55 0.53 0.53 0.55 0.58 0.63 0.66 0.70 0.73 0.76 0.78 -2 -10 -19 -28 -37 -56 -74 -93 -114 -134 -154 -173 167 149 133 120 110 101 92 84 78 4.36 4.36 4.30 4.27 4.19 4.02 3.83 3.62 3.37 3.13 2.91 2.71 2.51 2.31 2.11 1.94 1.77 1.65 1.50 1.35 1.23 178 171 161 153 144 127 111 95 80 66 52 39 26 14 1 -9 -20 -31 -41 -51 -59 0.004 0.011 0.02 0.03 0.04 0.05 0.07 0.08 0.08 0.09 0.09 0.10 0.10 0.11 0.11 0.12 0.13 0.14 0.14 0.15 0.15 94 82 78 72 67 58 49 41 35 29 26 22 20 16 13 10 8 3 -2 -7 -12 0.57 0.57 0.57 0.56 0.55 0.52 0.48 0.44 0.39 0.35 0.32 0.29 0.26 0.23 0.23 0.24 0.27 0.31 0.36 0.41 0.45 -2 -6 -12 -18 -24 -35 -45 -56 -67 -78 -88 -100 -114 -132 -155 -178 163 149 134 121 110 0.335 0.174 0.198 0.265 0.347 0.526 0.614 0.754 0.954 1.052 1.191 1.213 1.324 1.304 1.362 1.259 1.206 1.083 1.078 1.007 1.006 30.374 25.981 23.324 21.533 20.202 19.053 17.381 16.556 16.245 14.015 12.451 11.546 10.587 9.918 9.237 9.023 8.599 8.955 8.600 9.034 8.680 Note: 1. S-Parameters are de-embedded to the bend of the lead as shown on back page. 2. Gain calculations: MAG = |S21| |S12| (K K 2- 1 ). When K 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain NE76038 NE76038 NONLINEAR MODEL FET NONLINEAR MODEL PARAMETERS (1) Parameters VTO VTOSC ALPHA BETA GAMMA GAMMADC(2) Q DELTA VBI IS N RIS RID TAU CDS RDB CBS CGSO (3) UNITS Parameter capacitance inductance resistance Units picofarads nanohenries ohms Q1 -0.73 0 4 0.063 0 0.06 2.2 0.7 0.626 1.98e-11 1.4 0 0 3.2e-12 0.11e-12 Infinity 0 0.4e-12 0.04e-12 0.3 0.2 0.5 Infinity Parameters RG RD RS RGMET KF AF TNOM XTI EG VTOTC BETATCE FFE Q1 0 0 0 0 0 1 27 3 1.43 0 0 1 MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 3 V, ID = 10 mA to 30 mA Date: 8/30/96 CGDO(4) DELTA1 DELTA2 FC VBR (1) Series IV Libra TOM Model The parameter in Libra corresponds to the parameter in PSpice: (2) GAMMADC GAMMA (3) CGSO CGS (4) CGDO CGD NE76038 NE76038 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.01 RD 76000 LG 0.14 RG 1.5 R_COMP 365 2 LD 0.06 LD_PKG 0.53 RD_PKG DRAIN 0.38 RG_PKG GATE 1.3 LG_PKG 0.64 CRF_X 500 RS 4.6 CCD_PKG 0.06 CCG_PKG 0.06 LS_PKG 0.18 RS_PKG 0.1 CSG_PKG 0.003 CSD_PKG 0.02 SOURCE UNITS Parameter capacitance inductance resistance Units picofarads nanohenries ohms MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 3 V, ID = 10 mA to 30 mA Date: 8/30/96 NE76038 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 38 1.8 0.2 S GATE LEAD MARK D G 1.8 0.2 1.8 0.2 S 0.5 0.1 4 0.12 0.05 3 8 0.5 MIN 4.0 0.2 ALL LEADS 0.55 0.1 1.1 0.1 +0.2 0.1 -0.1 ORDERING INFORMATION PART NUMBER NE76038 NE76038-T1 AVAILABILITY Bulk up to 1 K 1K/Reel PACKAGE OUTLINE 38 38 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES * Headquarters * 4590 Patrick Henry Drive * Santa Clara, CA 95054-1817 * (408) 988-3500 * Telex 34-6393 * FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) * Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE |
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